TOSHIBA · FETs & Power MOSFETs · MPN TK32A12N1,S4X
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | 32A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 30W |
| RDS(on) | 13.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
120V 32A 4V 30W 13.8mΩ@10V 1 N-channel TO-220FP-3 Single FETs, MOSFETs RoHS