TOSHIBA TK31V60W,LVQ

TOSHIBA · FETs & Power MOSFETs · MPN TK31V60W,LVQ

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)86nC@10V
Current - Continuous Drain(Id)30.8A
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation240W
RDS(on)98mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF

Technical details

600V 30.8A 3.7V 240W 98mΩ@10V 1 N-channel DFN-4-EP(8x8) Single FETs, MOSFETs RoHS

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