TOSHIBA TK31N60W5,S1VF

TOSHIBA · FETs & Power MOSFETs · MPN TK31N60W5,S1VF

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)105nC@10V
Current - Continuous Drain(Id)30.8A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation230W
RDS(on)99mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF

Technical details

600V 30.8A 4.5V 230W 99mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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