TOSHIBA · FETs & Power MOSFETs · MPN TK30A06N1,S4X(S
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 16nC@10V |
| Current - Continuous Drain(Id) | 30A |
| Output Capacitance(Coss) | 400pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 12.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.05nF |
| Type | N-Channel |
60V 30A 4V 25W 12.2mΩ@10V 1 N-channel N-Channel TO-220SIS Single FETs, MOSFETs RoHS