TOSHIBA · FETs & Power MOSFETs · MPN TK30A06N1,S4X
No reviews yet — be the first to review TOSHIBA TK30A06N1,S4X.
| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 16nC@10V |
| Current - Continuous Drain(Id) | 30A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 25W |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.05nF |
60V 30A 4V 25W 15mΩ@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS