TOSHIBA · FETs & Power MOSFETs · MPN TK2R4E08QM,S1X
No reviews yet — be the first to review TOSHIBA TK2R4E08QM,S1X.
| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 178nC@10V |
| Current - Continuous Drain(Id) | 120A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 2.44mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13nF |
80V 120A 3.5V 300W 2.44mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS