TOSHIBA · FETs & Power MOSFETs · MPN TK2Q60D(Q)
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 7nC@10V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.4V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| RDS(on) | 3.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 280pF |
600V 2A 4.4V 60W 3.2Ω@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS