TOSHIBA · FETs & Power MOSFETs · MPN TK2P90E,RQ
No reviews yet — be the first to review TOSHIBA TK2P90E,RQ.
| Drain to Source Voltage | 900V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 2A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 80W |
| RDS(on) | 5.9Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 500pF |
900V 2A 4V 80W 5.9Ω@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS