TOSHIBA · FETs & Power MOSFETs · MPN TK2K2A60F,S4X
No reviews yet — be the first to review TOSHIBA TK2K2A60F,S4X.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 13nC@10V |
| Current - Continuous Drain(Id) | 3.5A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 30W |
| RDS(on) | 2.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 450pF |
600V 3.5A 4V 30W 2.2Ω@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS