TOSHIBA · FETs & Power MOSFETs · MPN TK2A65D(STA4,Q,M)
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| Gate Charge(Qg) | 9nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 2A |
| Gate Threshold Voltage (Vgs(th)) | 4.4V |
| Pd - Power Dissipation | 30W |
| RDS(on) | 3.26Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| Input Capacitance(Ciss) | 380pF |
| Type | N-Channel |
650V 2A 4.4V 30W 3.26Ω@10V N-Channel TO-220SIS Single FETs, MOSFETs RoHS