TOSHIBA · FETs & Power MOSFETs · MPN TK28V65W,LQ
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| Gate Charge(Qg) | 75nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 27.6A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 240W |
| RDS(on) | 120mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
650V 27.6A 3.5V 240W 120mΩ@10V 1 N-channel DFN-4-EP(8x8) Single FETs, MOSFETs RoHS