TOSHIBA · FETs & Power MOSFETs · MPN TK28N65W,S1F
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| Gate Charge(Qg) | 75nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 27.6A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 230W |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
650V 27.6A 3.5V 230W 110mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS