TOSHIBA TK25N60X5,S1F

TOSHIBA · FETs & Power MOSFETs · MPN TK25N60X5,S1F

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)60nC@10V
Current - Continuous Drain(Id)25A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation180W
RDS(on)140mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF

Technical details

600V 25A 4.5V 180W 140mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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