TOSHIBA TK25N60X,S1F(S

TOSHIBA · FETs & Power MOSFETs · MPN TK25N60X,S1F(S

No reviews yet — be the first to review TOSHIBA TK25N60X,S1F(S.

Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)25A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)125mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF
TypeN-Channel

Technical details

N-Channel 600V 25A 180W Through Hole TO-247

Related FETs & Power MOSFETs