TOSHIBA · FETs & Power MOSFETs · MPN TK25N60X,S1F
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 25A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 180W |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.4nF |
600V 25A 3.5V 180W 125mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS