TOSHIBA TK25A10K3(STA4,Q,M

TOSHIBA · FETs & Power MOSFETs · MPN TK25A10K3(STA4,Q,M

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)25A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)135pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.58nF
TypeN-Channel

Technical details

N-Channel 100V 25A 25W Through Hole TO-220

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