TOSHIBA · FETs & Power MOSFETs · MPN TK22A10N1,S4X(S
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| Output Capacitance(Coss) | 310pF |
|---|---|
| Pd - Power Dissipation | 30W |
| Gate Charge(Qg) | 28nC |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 11.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
30W 100V 2V 11.5mΩ@10V 1 N-channel N-Channel TO-220SIS Single FETs, MOSFETs RoHS