TOSHIBA · FETs & Power MOSFETs · MPN TK20G60W,RVQ
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 48nC@10V |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | - |
| RDS(on) | 155mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.68nF |
600V 20A 3.7V 155mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS