TOSHIBA · FETs & Power MOSFETs · MPN TK20A60W
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| Gate Charge(Qg) | 48nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 130mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.68nF |
600V 20A 2.7V 45W 130mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS