TOSHIBA · FETs & Power MOSFETs · MPN TK200F04N1L,LXGQ
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 214nC@10V |
| Current - Continuous Drain(Id) | 200A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 375W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.92nF |
40V 200A 3V 375W 1 N-channel TO-220SM(W) Single FETs, MOSFETs RoHS