TOSHIBA · FETs & Power MOSFETs · MPN TK1R5R04PB,LXGQ
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| Gate Charge(Qg) | 103nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 3.4nF |
| Current - Continuous Drain(Id) | 160A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 205W |
| Reverse Transfer Capacitance (Crss@Vds) | 490pF |
| RDS(on) | 1.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.5nF |
| Vgs | ±20V |
N-Channel 40V 160A 205W Surface Mount D2PAK