TOSHIBA · FETs & Power MOSFETs · MPN TK1R4S04PB,LXHQ
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| Gate Charge(Qg) | 103nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 120A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 180W |
| RDS(on) | 1.9mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.5nF |
40V 120A 3V 180W 1.9mΩ@6V 1 N-channel DPAK Single FETs, MOSFETs RoHS