TOSHIBA · FETs & Power MOSFETs · MPN TK19A45D(STA4,Q,M)
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 450V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 250mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
450V 19A 4V 50W 250mΩ@10V 1 N-channel N-Channel TO-220SIS Single FETs, MOSFETs RoHS