TOSHIBA TK18A50D(STA4,X,M)

TOSHIBA · FETs & Power MOSFETs · MPN TK18A50D(STA4,X,M)

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)18A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)220mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.6nF
TypeN-Channel

Technical details

N-Channel 500V 18A 50W Through Hole TO-220F-3

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