TOSHIBA · FETs & Power MOSFETs · MPN TK18A50D(STA4,Q,M)
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 18A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.6nF |
500V 18A 4V 50W 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS