TOSHIBA · FETs & Power MOSFETs · MPN TK17V65W,LQ
No reviews yet — be the first to review TOSHIBA TK17V65W,LQ.
| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 17.3A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 156W |
| RDS(on) | 210mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
650V 17.3A 3.5V 156W 210mΩ@10V 1 N-channel DFN-4-EP(8x8) Single FETs, MOSFETs RoHS