TOSHIBA · FETs & Power MOSFETs · MPN TK17N65W,S1F
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 17.3A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 165W |
| RDS(on) | 200mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
650V 17.3A 3.5V 165W 200mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS