TOSHIBA · FETs & Power MOSFETs · MPN TK17E80W,S1X
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Current - Continuous Drain(Id) | 17A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 180W |
| RDS(on) | 290mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.05nF |
800V 17A 4V 180W 290mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS