TOSHIBA TK17A80W,S4X

TOSHIBA · FETs & Power MOSFETs · MPN TK17A80W,S4X

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)32nC@10V
Output Capacitance(Coss)42pF
Current - Continuous Drain(Id)17A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)290mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.05nF
TypeN-Channel

Technical details

N-Channel 800V 17A 45W Through Hole TO-220SIS

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