TOSHIBA TK17A65W,S5X(M

TOSHIBA · FETs & Power MOSFETs · MPN TK17A65W,S5X(M

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)17.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)170mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

N-Channel 650V 45W Through Hole TO-220SIS

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