TOSHIBA TK16V60W,LVQ(S

TOSHIBA · FETs & Power MOSFETs · MPN TK16V60W,LVQ(S

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)38nC@10V
Current - Continuous Drain(Id)15.8A
Output Capacitance(Coss)35pF
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation139W
RDS(on)160mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)1.35nF
TypeN-Channel

Technical details

N-Channel 600V 15.8A 139W Surface Mount DFN-5(8x8)

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