TOSHIBA TK16A60W5,S4VX

TOSHIBA · FETs & Power MOSFETs · MPN TK16A60W5,S4VX

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)43nC@10V
Current - Continuous Drain(Id)15.8A
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation40W
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.35nF

Technical details

600V 15.8A 3.7V 40W 190mΩ@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS

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