TOSHIBA TK16A60W

TOSHIBA · FETs & Power MOSFETs · MPN TK16A60W

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)15.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.35nF
TypeN-Channel

Technical details

N-Channel 600V 40W Through Hole TO-220

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