TOSHIBA · FETs & Power MOSFETs · MPN TK160F10N1L,LQ
No reviews yet — be the first to review TOSHIBA TK160F10N1L,LQ.
| Gate Charge(Qg) | 122nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 3.9nF |
| Current - Continuous Drain(Id) | 160A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 610pF |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.1nF |
| Vgs | ±20V |
| Type | N-Channel |
N-Channel 100V 160A 375W Surface Mount TO-220SM(W)