TOSHIBA · FETs & Power MOSFETs · MPN TK160F10N1,LXGQ
No reviews yet — be the first to review TOSHIBA TK160F10N1,LXGQ.
| Gate Charge(Qg) | 121nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 160A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.51nF |
100V 160A 4V 375W 2.4mΩ@10V 1 N-channel TO-220SM(W) Single FETs, MOSFETs RoHS