TOSHIBA · FETs & Power MOSFETs · MPN TK160F10N1,LQ
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| Gate Charge(Qg) | 121nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 160A |
| Output Capacitance(Coss) | 3.96nF |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 500pF |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.51nF |
| Type | N-Channel |
N-Channel 100V 375W Surface Mount TO-220SM