TOSHIBA TK15S04N1L,LQ

TOSHIBA · FETs & Power MOSFETs · MPN TK15S04N1L,LQ

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)15A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation46W
RDS(on)17.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)610pF

Technical details

40V 15A 2.5V 46W 17.8mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS

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