TOSHIBA · FETs & Power MOSFETs · MPN TK155E65Z,S1X
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 29nC@10V |
| Current - Continuous Drain(Id) | 18A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 155mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.635nF |
650V 18A 4V 150W 155mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS