TOSHIBA · FETs & Power MOSFETs · MPN TK14G65W5,RQ
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 13.7A |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 130W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
650V 13.7A 4.5V 130W 1 N-channel D2PAK Single FETs, MOSFETs RoHS