TOSHIBA · FETs & Power MOSFETs · MPN TK14E65W5,S1X
No reviews yet — be the first to review TOSHIBA TK14E65W5,S1X.
| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 13.7A |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 130W |
| RDS(on) | 300mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
650V 13.7A 4.5V 130W 300mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS