TOSHIBA TK13P25D,RQ(S

TOSHIBA · FETs & Power MOSFETs · MPN TK13P25D,RQ(S

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage250V
Current - Continuous Drain(Id)13A
Output Capacitance(Coss)66pF
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

N-Channel 250V 13A 96W Surface Mount TO-252

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