TOSHIBA TK13P25D,RQ

TOSHIBA · FETs & Power MOSFETs · MPN TK13P25D,RQ

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)25nC@10V
Current - Continuous Drain(Id)13A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation96W
RDS(on)250mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.1nF

Technical details

250V 13A 3.5V 96W 250mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS

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