TOSHIBA · FETs & Power MOSFETs · MPN TK13E25D,S1X(S
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 13A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 102W |
| RDS(on) | 250mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
250V 13A 3.5V 102W 250mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS