TOSHIBA TK13A65U

TOSHIBA · FETs & Power MOSFETs · MPN TK13A65U

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)47pF
RDS(on)320mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)950pF
TypeN-Channel

Technical details

N-Channel 650V 13A 40W Through Hole SC-67

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