TOSHIBA TK13A60D(STA4,X,M)

TOSHIBA · FETs & Power MOSFETs · MPN TK13A60D(STA4,X,M)

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)43A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)330mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.3nF
TypeN-Channel

Technical details

N-Channel 600V 43A 50W Through Hole TO-220

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