TOSHIBA · FETs & Power MOSFETs · MPN TK12P60W
No reviews yet — be the first to review TOSHIBA TK12P60W.
| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 11.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF |
| RDS(on) | 265mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 890pF |
600V 11.5A 100W 265mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS