TOSHIBA · FETs & Power MOSFETs · MPN TK12E60W,S1VX(S
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| Gate Charge(Qg) | 25nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 23pF |
| Current - Continuous Drain(Id) | 11.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF |
| RDS(on) | 265mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 890pF |
| Type | N-Channel |
N-Channel 600V Through Hole TO-220-3