TOSHIBA · FETs & Power MOSFETs · MPN TK12A60D(STA4,Q,M)
No reviews yet — be the first to review TOSHIBA TK12A60D(STA4,Q,M).
| Output Capacitance(Coss) | 190pF |
|---|---|
| Pd - Power Dissipation | 45W |
| Configuration | - |
| Gate Charge(Qg) | 38nC |
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 550mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
45W 600V 12A 4V 550mΩ@10V 1 N-channel N-Channel TO-220SIS Single FETs, MOSFETs RoHS