TOSHIBA TK12A50D

TOSHIBA · FETs & Power MOSFETs · MPN TK12A50D

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)135pF
Current - Continuous Drain(Id)12A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.35nF
TypeN-Channel

Technical details

N-Channel 500V 12A 45W Through Hole TO-220

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