TOSHIBA · FETs & Power MOSFETs · MPN TK11A55D(STA4,Q,M)
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| Drain to Source Voltage | 550V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 11A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45W |
| RDS(on) | 630mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 1.35nF |
550V 11A 4V 45W 630mΩ@10V TO-220SIS Single FETs, MOSFETs RoHS